KARAKTERISASI OPTIK DAN SIFAT LISTRIK FILM LiTaO3 PADA VARIASI SUHU ANNEALING

  • Ira Ukhtianingsih Mahasiswa Departemen Fisika, FMIPA, Institut Pertanian Bogor, Kampus IPB Darmaga, Bogor, 16680
  • Yulia Sani Mahasiswa Departemen Fisika, FMIPA, Institut Pertanian Bogor, Kampus IPB Darmaga, Bogor, 16680
  • Irzaman Irzaman Staf Pengajar Departemenen Fisika, Institut Pertanian Bogor, Kampus IPB Darmaga, Bogor, 16680

Abstract

LiTaO3 thin films has been grown upper side on p-type Si (100) substrates using Chemical Solution Deposition (CSD) methods followed by spin coating its speed 3000 rpm with dropped for 30 seconds in solubility 1 M. Thin films was annealed at  550 ËšC, 575 ËšC, 600 ËšC and  625 ËšC with increasing degree of annealed 1.67 ËšC/minutes. This conductivity values is semiconductor and conductivity.  It might be effect the result of optical test showed LiTaO3 thin films could absorb in UV wavelength. It is convincing that LiTaO3 promise to be used for infrared sensor.

Keywords: conductive, LiTaO3, optical, p-type silicon, semiconductor.

Published
2015-10-30