TEKNIK PELAPISAN SILIKON DIOKSIDA (SiO2) DENGAN ALAT RF-SPUTTERING ARC-12M

  • Slamet Widodo PPET-LIPI, Jl. Sangkuriang Komp. LIPI Bandung 40135 No.Telp/Fax:022-2504660/022-2504659

Abstract

In this paper described the technique of metal and non metal coating (Alloy) by using a sputtering ARC-12M. Sputtering is a process ejected material from a surface of solids or liquids due to ground by high-energy particles up to momentum exchange occurs (momentum exchange). Target in the form of coating material is placed in the same direction with the substrate in a vacuum chamber with initial pressure (base pressure) equal to 5x10-4 to 5x10-7torr. Types of particles that were fired from the gas ions that are not easy to react to other substances or inert gas. On Non-metal deposition process (Alloy) eg Silicon Dioxide (SiO2) by RF-sputtering method, the thickness would increase linearly with increasing time.The deposition of chromium (Cr) with Argon (Ar) gas at a pressure of 15 mTorr, it produce relatively higher than the pressure of 25 mTorr.

Keywords :Deposition, SiO2, RF Sputtering ARC-12M.

Published
2012-10-30
How to Cite
Widodo, S. (2012). TEKNIK PELAPISAN SILIKON DIOKSIDA (SiO2) DENGAN ALAT RF-SPUTTERING ARC-12M. PROSIDING SEMINAR NASIONAL FISIKA (E-JOURNAL), 1(1), 82 - 88. Retrieved from http://journal.unj.ac.id/unj/index.php/prosidingsnf/article/view/6158