ANALISA PENGARUH REDUKSI TERMAL TERHADAP KERUSAKAN STRUKTUR (STRUCTURAL-DISORDER) PADA LAPISAN TIPIS GRAPHENE OXIDE TEREDUKSI

  • Biaunik Niski Kumila Jurusan Fisika, Fakultas Sains dan Teknologi, Universitas Islam Negeri Walisongo, Jl. Walisongo No. 3-5, Tambakaji, Ngaliyan, Semarang , 50185
  • ChuanPu Liu Jurisan Ilmu dan Teknik Material, Fakultas Teknik, National Cheng Kung University, No.1, Daxue Rd, Esat District, Tainan City, Taiwan, 701
Keywords: reduced graphene oxide, thermal reduction, structural disorder

Abstract

Abstrak

Tujuan penelitian ini adalah menganalisa kerusakan struktur pada lapisan tipis graphene oxide setelah direduksi pada temperatur reduksi yang bervariasi. Lapisan tipis graphene oxide yang disintesis menggunakan metode Hummers direduksi secara termal pada variasi temperatur 3500C dan 8500C selama 2 jam dalam pemanas vakum (~10-3Torr). Kuantitas defect sampel dikarakterisasi menggunakan Raman Spectroscopy sedangkan mikrostrukturnya dikarakterisasi menggunakan SEM (Scanning Electron Microscope). Persentase (kuantitas) defect pada graphene oxide dinyatakan dengan ID/IG. Nilai ID/IG graphene oxide, graphene oxide tereduksi pada temperatur 3500C dan 8500C secara berurutan adalah 0.958, 0.823 dan 1.102. Nilai ID/IG tersebut menunjukkan bahwa kuantitas defect graphene oxide berkurang setelah direduksi pada suhu 3500C tetapi bertambah saat direduksi pada suhu 8500C. Hasil gambar SEM menunjukkan bahwa lapisan tipis graphene oxide menkerut setalah direduksi pada temperatur 3500C dan berubah menjadi material seperti graphite berpori (porous stacked-layer graphite) setelah direduksi pada temperatur 8500C.

Kata-kata kunci: graphene oxide tereduksi, reduksi termal, kerusakan struktur.

Abstract

The aim of this research is to analyse the structural-defect of graphene oxide reduced at various reduction temperatures. Graphene oxide thin film synthesized by Hummers method was thermally reduced at the temperature of 3500C and 8500C for 2 hours in vacuum condition (~10-3 Torr). The presence of defects was characterized by Raman spectroscopy while the material’s microstructure was characterized by SEM (Scanning Electron Microscope). A measure of defects existing on graphene oxide was represented by a ratio of D peak intensity and G peak intensity (ID/IG). The ID/IG value of raphene oxide and graphene oxide which is thermally reduced at 3500C and 8500C was 0.598, 0.823 and 1.102, respectively. Those ID/IG indicated that the quantity of defect was diminished after thermal reduction at 3500C, yet it was increased after severe thermal reduction at 8500C. SEM images of samples indicated the wrinkled graphene oxide thin film after thermal reduction at 350 0C and it formed a porous stacked-graphite like material after severe thermal reduction at 8500C

Keywords: reduced graphene oxide, thermal reduction, structural disorder .

Published
2017-04-30