STUDI STRUKTUR KRISTAL LAPISAN TIPIS SENG OKSIDA DENGAN DOPING MAGNESIUM (ZNO:MG) 0.08 MOL MENGGUNAKAN TEKNIK PENGHALUSAN RIETVELD

Putri Lidya Sari; Iwan Sugihartono; Setia Budi; Achmad Ainul Yaqin

doi:10.21009/03.1101.FA11

Putri Lidya Sari Program Studi Fisika, FMIPA Universitas Negeri Jakarta, Jl. Rawamangun Muka No. 01, Rawamangun 13220, Indonesia
Iwan Sugihartono Program Studi Fisika, FMIPA Universitas Negeri Jakarta, Jl. Rawamangun Muka No. 01, Rawamangun 13220, Indonesia
Setia Budi Program Studi Kimia, FMIPA Universitas Negeri Jakarta, Jl. Rawamangun Muka No. 01, Rawamangun 13220, Indonesia
Achmad Ainul Yaqin FMIPA Universitas Negeri Jakarta, Jl. Rawamangun Muka No. 01, Rawamangun 13220, Indonesia

DOI: https://doi.org/10.21009/03.1101.FA11

Abstract

Abstrak

Pada penelitian ini telah dilakukan pendeposisian lapisan tipis ZnO tanpa doping dan dengan doping Mg menggunakan teknik teknik Ultrasonic Spray Pyrolysis (USP) di atas substrat silicon (Si) pada suhu 450^oC dengan frekuensi 1.7 MHz selama 15 menit. Zinc Acetate Dyhydrate [Zn(CH₃COO)₂] digunakan sebagai prekusor Zn dan Mg(CH₃COO)₂4H₂O sebagai prekusor Mg dengan konsentrasi 0.08 mol. Struktur kristal lapisan tipis ZnO tanpa doping dan dengan doping Mg (0.08 mol) dianalisis menggunakan teknik difraksi sinar-x (XRD). Berdasarkan pola XRD terkonfirmasi bahwa struktur kristal dari lapisan tipis ZnO dan ZnO:Mg adalah polikristalin dengan bentuk hexagonal wurtzite. Analisis struktur kristal lebih lajut pada lapisan tipis ZnO tanpa doping dan dengan doping Mg akan dilakukan menggunakan teknik penghalusan Rietveld agar diperoleh data yang lebih baik.

Kata-kata kunci: Lapisan tipis ZnO, Doping Mg, XRD, Teknik Penghalusan Rietveld

Abstract

This research has been carried out in the form of undoped and Mg-doped ZnO (ZnO:Mg) thin films using Ultrasonic Spray Pyrolysis (USP) technique which has deposited on the silicon (Si) substrate at 450^oC with ultrasonic frequency of 1.7 MHz for 15 minutes. Zinc Acetate Dyhydrate [Zn(CH₃COO)₂] were used as precursor of Zn and the compound sources of Mg(CH₃COO)₂4H₂O were used as precursor of Mg with the composition of 0.08 mol. Crystal structure of undoped and Mg-doped ZnO thin films has been investigated using X-Ray Diffraction (XRD). As a result, acquired from XRD pattern reveals that the growth of undoped and Mg-doped ZnO thin films has polycrystalline with hexagonal wurtzite structure. In addition, the crystal structure of undoped and Mg-doped ZnO thin films would be analyzed meticulously using Rietveld refinement method in order to get appropriate data.

Keywords: ZnO Thin Films, Mg dopant, XRD, Rietveld Refinement Method

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