STUDI STRUKTUR KRISTAL LAPISAN TIPIS SENG OKSIDA DOPING MAGNESIUM 0.01 MOL MENGGUNAKAN TEKNIK PENGHALUSAN RIETVELD

Febyana Nur Aliffah; Iwan Sugihartono; Isnaeni Isnaeni; Achmad Ainul Yaqin

doi:10.21009/03.1101.FA16

Febyana Nur Aliffah Program Studi Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Jakarta. Jakarta 13220, Indonesia
Iwan Sugihartono Program Studi Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Jakarta. Jakarta 13220, Indonesia
Isnaeni Isnaeni Badan Riset dan Inovasi Nasional, Jalan M.H. Thamrin, Jakarta Pusat. Jakarta 10340, Indonesia
Achmad Ainul Yaqin Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Jakarta. Jakarta 13220, Indonesia

DOI: https://doi.org/10.21009/03.1101.FA16

Abstract

Abstrak

Penelitian lapisan tipis ZnO tanpa doping dan dengan menggunakan doping Mg 0.01 mol telah berhasil dideposisi di atas substrat Silikon (Si) pada suhu 450^oC. Pendeposisian lapisan tipis ZnO dilakukan dengan metode Ultrasonic Spray Pyrolysis (USP) pada frekuensi 1.7MHz selama 15 menit. Karakterisasi struktur kristal lapisan tipis ZnO tanpa doping dan dengan doping Mg diteliti menggunakan X-Ray Diffraction (XRD). Mengacu pada pola XRD, terkonfirmasi bahwa semua lapisan tipis terkristalisasi dengan baik dalam struktur polikristal hexagonal wurtzite. Tidak terdeteksinya fase tambahan seperti fase pengotor mengindikasikan bahwa ion Mg berhasil mensubstistusi dan menempati kisi ZnO. Pengukuran XRD mengindikasikan terjadinya kenaikan ukuran kristal pada lapisan tipis ZnO setelah ditambahkan doping Mg. Analisis struktur kristal secara detail akan dilakukan menggunakan teknik penghalusan Rietveld agar diperoleh data yang lebih presisi.

Kata-kata kunci: lapisan tipis ZnO, doping Mg, USP, teknik penghalusan Rietveld, struktur kristal

Abstract

The study of undoped and 0.01 mol Mg-doped ZnO thin films have been successfully deposited on silicon (Si) substrate at 450°C. The deposition of ZnO thin films was carried out using the Ultrasonic Spray Pyrolysis (USP) method at 1.7MHz for 15 minutes. The crystal structure characterization of the undoped and Mg doped ZnO thin films were examined by X-Ray Diffraction (XRD). According to x-ray diffraction patterns, it confirms that all grown films were well crystallized in polycrystalline hexagonal wurtzite structure. The absence of other additional peaks related to impurities phases confirmed that Mg ion can successfully subtitute and occupy the site of ZnO. The XRD measurements indicated that Mg doping increases the crystalline size of ZnO thin films. Furthermore, the crystal structure of the undoped and Mg doped ZnO thin films would be analyzed intimately using the Rietveld refinement in order to obtain more precise data.

Keywords: ZnO thin films, Mg doped, USP, Rietveld refinement, crystal structure

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