ANALISIS CELAH ENERGI PADA FILM TIPIS Ba0,375Sr0,625TiO3 DI ATAS SUBSTRAT KACA INDIUM TIN OXIDE (ITO) DAN SUBSTRAT SI (100) TIPE P
DOI:
https://doi.org/10.21009/03.1401.FA09Abstract
Film tipis Ba0,375Sr0,625TiO3 berhasil difabrikasi pada substrat kaca Indium Tin Oxide (ITO) dan substrat Silikon(100) tipe-P menggunakan metode Chemical Solution Deposition (CSD) dengan larutan prekursor berkonsentrasi 0,5 M. Proses pelapisan dilakukan melalui teknik spin coating pada kecepatan 3000 rpm, diikuti dengan proses annealing pada suhu 550 °C dengan laju pemanasan 100 °C per jam selama 16 jam, kemudian didinginkan secara bertahap hingga suhu kamar. Substrat kaca ITO yang digunakan memiliki ketebalan 1,1 mm dan resistivitas sekitar 20 ohm per kuadrat, sedangkan substrat Si(100) tipe-P memiliki resistivitas sekitar 10 ohm per kuadrat. Sifat optik film tipis dikarakterisasi menggunakan spektrofotometer UV-Vis pada rentang panjang gelombang 230 hingga 850 nm. Hasil pengukuran menunjukkan nilai celah pita energi sebesar 1,57 eV pada substrat ITO dan 2,51 eV pada substrat Si(100) tipe-P. Analisis celah pita dari film tipis Ba0,375Sr0,625TiO3 pada kedua jenis substrat ini penting dilakukan karena material tersebut berpotensi sebagai kandidat utama untuk aplikasi sensor tekanan di masa mendatang.
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