ANALISIS ENERGI GAP FILM TIPIS Ba0,625Sr0,375TiO3 DI ATAS SUBSTRAT KACA INDIUM TIN OXIDE (ITO) DAN SUBSTRAT Si (100) TIPE-P
DOI:
https://doi.org/10.21009/03.1401.FA12Abstract
Lapisan tipis Ba0,625Sr0,375TiO3 di atas substrat kaca Indium Tin Oxide (ITO) dan Substrat Si (100) Tipe P telah berhasil dibuat dengan metode Chemical Solution Deposition (CSD) dengan kelarutan 0,5 M yang dibantu dengan spin coating 3000 rpm, dan annealing pada temperatur 550℃ dengan kelajuan suhu 100 ℃/jam yang ditahan selama 16 jam dan suhu pendinginan hingga suhu kamar. Substrat kaca Indium Tin Oxide (ITO) dengan ketebalan kaca 1,1 mm dan resistivitas ~20 ohm/sq dan resistivitas Si tipe-P ~10 ohm/sq. Lapisan tipis ini diuji sifat optiknya menggunakan Spektrofotometer UV-Vis dengan rentang 230- 850 nm dan menghasilkan celah energi sebesar 2,89 eV di atas substrat ITO dan celah energi sebesar 2,42 eV di atas substrat Si (100) tipe P. Analisis celah energi film tipis Ba0,625Sr0,375TiO3 di atas substrat kaca Indium Tin Oxide (ITO) dan di atas substrat Si (100) tipe P sangat penting dilakukan karena film ini merupakan cikal bakal sensor suhu.
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