ANALISIS ENERGI GAP FILM TIPIS Ba0,875Sr0,125TiO3 DI ATAS SUBSTRAT KACA INDIUM TIN OXIDE (ITO) DAN SUBSTRAT Si (100) TIPE-P
DOI:
https://doi.org/10.21009/03.1401.FA15Abstract
Lapisan tipis Ba0,875Sr 0,125TiO3 di atas substrat kaca Indium Tin Oxide (ITO) dan Substrat Si (100) Tipe-P telah berhasil dibuat dengan metode Chemical Solution Deposition (CSD) dengan kelarutan 0,5 M yang dibantu dengan spin coating 3000 rpm, dan annealing pada temperatur 550 ℃ dengan kelajuan suhu 100 ℃/jam yang ditahan selama 16 jam dan suhu pendinginan hingga suhu kamar. Substrat kaca Indium Tin Oxide (ITO) dengan ketebalan kaca 1,1 mm, resistivitas ~20 ohm/sq dan resistivitas Si Tipe-P ~10 ohm/sq. Lapisan tipis ini diuji sifat optiknya menggunakan Spektrofotometer UV-Vis dengan rentang 230-850 nm dan menghasilkan celah energi sebesar 2,06 eV di atas substrat ITO dan celah energi sebesar 2,4 eV di atas substrat Si (100) Tipe-P. Analisis celah energi film tipis Ba0,875Sr 0,125TiO3 di atas substrat kaca Indium Tin Oxide (ITO) dan di atas substrat Si (100) Tipe-P sangat penting dilakukan karena film ini merupakan cikal bakal sensor cahaya.
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