CHARACTERIZATION OF ENERGY BAND GAP THIN FILM BaTiO3 – BaZr0.5Ti0.5O3 USING DIFUSION REFLECTANCE SPECTROSCOPY (DRS) METHOD

Rahmi Dewi; Wesly Arianto Manalu; Brian Noval Asrinaldo; Ari Sulistyo  Rini; Yanuar Yanuar

doi:10.21009/SPEKTRA.081.02

Authors

Rahmi Dewi Physics Dept, Math and Science Faculty, Universitas Riau, Pekanbaru, 28293, Indonesia
Wesly Arianto Manalu Physics Dept, Math and Science Faculty, Universitas Riau, Pekanbaru, 28293, Indonesia
Brian Noval Asrinaldo Physics Dept, Math and Science Faculty, Universitas Riau, Pekanbaru, 28293, Indonesia
Ari Sulistyo Rini Physics Dept, Math and Science Faculty, Universitas Riau, Pekanbaru, 28293, Indonesia
Yanuar Yanuar Physics Dept, Math and Science Faculty, Universitas Riau, Pekanbaru, 28293, Indonesia

DOI:

https://doi.org/10.21009/SPEKTRA.081.02

Keywords:

ferroelectric material, thin film, sol-gel method, diffusion reflectance spectroscopy (DRS)

Abstract

Ferroelectric material is a dielectric material that has a high dielectric constant value so that it can be made in the form of thin films. Its application is based on electro-optical properties, one of which is the infrared thermal switch. This paper aims to determine the bandgap energy (Eg) of a 0.3BaTiO₃ – 0.7BaZr_0.5Ti_0.5O₃ thin film. The 0.3BaTiO₃ – 0.7BaZr_0.5Ti_0.5O₃ thin film is a semiconductor material with the valence band and conduction band separated by an energy bandgap (Eg). Thin films of 0.3BaTiO₃ – 0.7BaZr_0.5Ti_0.5O₃ were grown on FTO substrates using the sol-gel method. The films of 0.3BaTiO₃ – 0.7BaZr_0.5Ti_0.5O₃ were annealed at different temperatures of 700°C, 750°C and 800°C within 1 hour. Characterization was carried out using Ultra Violet Visible (UV-Vis) spectroscopy to determine Eg using the Diffusion Reflectance Spectroscopy (DRS) method. The DRS method was found to be better for solid materials considering the scattering component. The UV-Vis characterization results show that an increase in annealing temperature causes a decrease in Eg. For example the values at 700°C, 750°C and 800°C are 3.5 ± 0.01 eV; 3.3±0.01 eV and 3.2±0.01 eV. The decrease in Eg is related to the diffusion of Barium Titanate (BaTiO₃) ions into the Barium Zirconium Titanate (BZT) lattice forming a new sub-gap which in turn gives BT-BZT the ability to absorb lower light. Lower light absorption means more capable optics for multilayer systems.

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